Samsung Electronics and ASML are expanding their strategic collaboration on High NA EUV lithography, a next-generation chipmaking technology, with Samsung planning to adopt it for high volume DRAM manufacturing by 2028. That would be a first for the industry in DRAM, the two companies said in their September 8, 2026 announcement.
As part of the expanded collaboration, Samsung will join an initiative to develop a 12-inch photomask platform, moving the industry from the current 6-inch masks. The companies say the bigger masks should lift fab output, cut production costs and clear stitching limits. Samsung says it will work with partners on mask technologies and infrastructure.
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According to the announcement, High NA EUV should let DRAM scaling continue further, with sharper resolution simplifying processes and improving efficiency. The companies say they will explore further collaboration opportunities, though no financial terms or investment amounts were disclosed.
Young Hyun Jun, Vice Chairman and CEO of Samsung Electronics, said in a statement: "The AI era is transforming the semiconductor industry and increasing the importance of technological innovation across the entire value chain. Samsung is committed to maintaining leadership in advanced semiconductor manufacturing, including memory and foundry, through breakthrough technologies and strong partnerships. By further strengthening our collaboration with ASML, we are helping lay the foundation for the next generation of AI and semiconductor innovation."
